Zn(InSe₂)₂ is a ternary semiconductor ceramic compound belonging to the I-III-VI₂ family of chalcogenides, formed from zinc, indium, and selenium. This material is primarily of research and development interest for optoelectronic and photovoltaic applications, where its semiconducting properties and tunable bandgap make it a candidate for next-generation solar cells, photodetectors, and light-emitting devices; it represents an alternative approach to conventional binary semiconductors by enabling compositional engineering for improved performance or cost reduction in specific spectral ranges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,307.7 | ksi | DFT | ||
Shear Modulus(G) | 2,349.7 | ksi | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Dielectric Constant (Relative Permittivity)(εr)2 entries | 11.50 | - | DFT · PBE | ||
| ↳ | 10.48 range 8.805–12.15median of 2 measurements | - | DFT · PBEsol | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Piezoelectric Modulus(eij) | 0.08464 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data