Zn(GaSe2)2
semiconductorZn(GaSe₂)₂ is a ternary compound semiconductor composed of zinc, gallium, and selenium, belonging to the family of wide-bandgap and intermediate semiconductors used in photonic and electronic applications. This material is primarily of research interest for optoelectronic devices including photodetectors, solar cells, and nonlinear optical applications, where its direct bandgap and crystal structure offer potential advantages in light absorption and emission across the visible to infrared spectrum. While not yet widely commercialized, zinc gallium selenides represent an important materials platform for tuning bandgap energy and developing next-generation photovoltaic and sensing technologies that demand higher efficiency or specialized spectral response compared to conventional III-V semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr)2 entries | — | - | — | — | |
| ↳ | — median of 2 measurements | - | — | — | |
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | — | |
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | — | |
Piezoelectric Modulus(eij) | — | C/m² | — | — | |
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | — |