YZrO2N
semiconductorYZrO2N is an oxynitride ceramic compound combining yttria-stabilized zirconia (YSZ) with nitrogen incorporation, representing an emerging material in the ceramic and semiconductor research space. This material is investigated primarily for high-temperature structural applications and advanced semiconductor devices where enhanced thermal stability, hardness, and potentially improved electrical or thermal properties over conventional YSZ are sought. Its nitrogen-doped variant offers potential advantages in applications demanding superior mechanical performance or modified electronic properties compared to traditional oxide ceramics, though it remains largely in research and development phases with limited large-scale industrial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |