YSnO2N — Properties & Data | MatWorld

YSnO2N

semiconductor

· YSnO2N

YSnO₂N is an experimental oxynitride semiconductor compound combining yttrium, tin, oxygen, and nitrogen elements, belonging to the emerging class of mixed-anion semiconductors. This material is primarily of research interest for next-generation optoelectronic and photocatalytic applications, where the incorporation of nitrogen into the tin dioxide lattice is designed to modify electronic band structure and enhance visible-light activity compared to conventional SnO₂. Engineers evaluating this material should recognize it as a development-stage compound rather than an established commercial option, relevant mainly to programs targeting advanced photocatalysis, photovoltaics, or wide-bandgap semiconductor innovation.

photocatalytic water treatmentvisible-light photocatalysissemiconductor research devicesoptoelectronic applicationsband engineering materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Filter by

Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.700	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.000511	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8200	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

YSnO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control