YHfO2N

semiconductor
· YHfO2N

YHfO2N is an experimental oxynitride ceramic compound combining yttrium, hafnium, oxygen, and nitrogen—belonging to the family of high-entropy or complex oxynitride ceramics under active research. This material class is investigated for extreme-environment applications where conventional oxides fall short, particularly in thermal barrier coatings, next-generation electronics, and high-temperature structural applications where enhanced thermal stability, oxidation resistance, and mechanical properties at elevated temperatures are critical. YHfO2N remains primarily a research compound; engineers would consider it when conventional hafnium oxides or yttria-stabilized zirconia are insufficient and when project timelines permit engagement with emerging materials.

thermal barrier coatingshigh-temperature ceramicsadvanced semiconductorsaerospace propulsionsolid-state electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
3.400
eV—
Magnetic Moment(μB)
-0.000623
μB—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
0.3000
eV/atom—
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.