YGeO2N — Properties & Data | MatWorld

YGeO2N

semiconductor

· YGeO2N

YGeO2N is an experimental oxynitride semiconductor compound containing yttrium, germanium, oxygen, and nitrogen. This material belongs to the family of wide-bandgap semiconductors and mixed-anion compounds, which are of interest in advanced semiconductor research for next-generation electronic and photonic devices. YGeO2N remains primarily a research-phase material; its potential applications leverage the tunable electronic properties characteristic of oxynitride systems, particularly where conventional oxides or nitrides alone cannot meet performance requirements.

experimental semiconductorswide-bandgap electronicsphotonic devicestransparent conducting oxidesoptoelectronics researchadvanced materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.300	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.000278	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5600	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

YGeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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