YGaOFN is an oxynitride ceramic compound containing yttrium, gallium, oxygen, and nitrogen, belonging to the family of rare-earth oxynitride semiconductors. This material is primarily of research interest for optoelectronic and photocatalytic applications, where the mixed anionic lattice (oxygen and nitrogen) can enable tailored bandgaps and enhanced visible-light absorption compared to conventional oxides or nitrides alone. Engineers may consider YGaOFN for next-generation photocatalysis, light-emission devices, or wide-bandgap semiconductor applications where the unique properties of oxynitrides offer advantages over single-anion alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 4.145e-16 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7600 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data