YGaO₂N is an oxynitride ceramic compound combining yttrium, gallium, oxygen, and nitrogen elements, belonging to the class of advanced ceramic materials designed for high-performance applications. This material is primarily investigated in research contexts for optoelectronic and photocatalytic applications, leveraging the wide bandgap properties typical of oxynitride semiconductors. YGaO₂N is notable as a potential alternative to traditional oxides and nitrides for visible-light photocatalysis and as a host material for rare-earth doping in phosphor and luminescence applications, though industrial adoption remains limited compared to more established ceramic systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 0.8641 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8400 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data