YGaN3 — Properties & Data | MatWorld

YGaN3

ceramic

· YGaN3

YGaN3 is a rare-earth nitride ceramic compound combining yttrium and gallium in a nitride matrix, representing an emerging material class at the intersection of nitride semiconductors and refractory ceramics. This material is primarily of research and development interest for high-temperature structural applications and advanced semiconductor device platforms where superior thermal stability and chemical resistance are required. YGaN3 and related rare-earth gallium nitrides are being investigated for next-generation wide-bandgap electronics, thermal management systems, and extreme-environment applications where conventional GaN or AlN may be insufficient.

wide-bandgap semiconductorshigh-temperature ceramicsthermal management substratesextreme-environment electronicsresearch/development phase materialsrefractory applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	2.286	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.220	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

YGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental