YGaN2 is a yttrium gallium nitride ceramic compound belonging to the family of rare-earth doped gallium nitrides, which are primarily of research and development interest rather than established commercial materials. This material is being investigated for advanced applications requiring wide bandgap semiconductors and high-temperature ceramic properties, with potential use in next-generation optoelectronic and high-power device architectures where thermal stability and chemical resistance are critical.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2015 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.496 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 7.098 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2106 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.060 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data