YGa₂N₃ is a ternary nitride ceramic compound combining yttrium and gallium, belonging to the family of rare-earth gallium nitrides. This material is primarily of research interest for potential optoelectronic and high-temperature applications, as it combines the wide bandgap properties characteristic of gallium nitride semiconductors with rare-earth doping effects that can modify electronic and thermal behavior.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2008 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.406 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1020 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.9352 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data