YbAs is a rare-earth arsenide semiconductor compound in which ytterbium is bonded to arsenic, forming a III-V intermetallic semiconductor material. This compound is primarily of scientific and research interest for its unique electronic properties related to rare-earth doping and strong electron-phonon coupling effects. Applications are largely exploratory, focusing on low-temperature physics, magnetism studies, and potential optoelectronic or thermoelectric device research rather than conventional industrial manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 48.10 | GPa | — | ||
Shear Modulus(G) | 14.10 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.910 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.020 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | 18.83 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2024 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.9107 | eV/atom | — |