YbAs

semiconductor
· YbAs

YbAs is a rare-earth arsenide semiconductor compound in which ytterbium is bonded to arsenic, forming a III-V intermetallic semiconductor material. This compound is primarily of scientific and research interest for its unique electronic properties related to rare-earth doping and strong electron-phonon coupling effects. Applications are largely exploratory, focusing on low-temperature physics, magnetism studies, and potential optoelectronic or thermoelectric device research rather than conventional industrial manufacturing.

low-temperature physics researchrare-earth semiconductor studiesKondo effect investigationmagnetotransport characterizationmaterials science prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
48.10
GPa
Shear Modulus(G)
14.10
GPa
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Density(ρ)
7.910
kg/m³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
1.020
eV
0.000
eV
Magnetic Moment(μB)
0.000
µB
Seebeck Coefficient(S)
18.83
µV/K
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
0.2024
eV/atom
Formation Energy(ΔHf)
-0.9107
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.