Yb₆Ge₂O₂ is a rare-earth germanium oxide semiconductor compound belonging to the family of mixed-valence rare-earth materials. This is an experimental/research composition primarily investigated for its electronic and structural properties in fundamental materials science; it is not yet widely deployed in commercial applications. The material's potential lies in advanced optoelectronic or high-temperature semiconductor applications where rare-earth dopants and mixed-valence states offer novel band structure engineering compared to conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,505.5 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 5,520.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1438 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.936 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data