Yb₄Mn₄Ge₄ is an intermetallic semiconductor compound combining rare-earth ytterbium, transition metal manganese, and germanium in a 1:1:1 stoichiometric ratio. This is a research-phase material studied for its potential electronic and magnetic properties within the broader class of rare-earth intermetallic semiconductors. The compound is not currently established in mainstream industrial applications but represents ongoing investigation into materials that could exhibit interesting thermoelectric, magnetoresistive, or electronic band structure characteristics relevant to advanced device development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,885.2 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 4,901.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01340 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4020 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data