Yb₃Mn₃Ge₃ is an intermetallic compound semiconductor composed of ytterbium, manganese, and germanium, belonging to the family of rare-earth transition metal germanides. This is a research-phase material studied primarily for its electronic and magnetic properties rather than established commercial applications, with potential relevance to thermoelectric devices, magnetic semiconductors, and quantum materials research where the interplay between rare-earth and transition metal sublattices creates novel electronic behavior.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 55.61 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 42.17 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00110 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3390 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data