Yb₁Si₂Os₂ is an intermetallic semiconductor compound combining ytterbium, silicon, and osmium elements, representing an emerging material in the rare-earth intermetallic family. This composition sits at the intersection of research into high-performance semiconductors and refractory materials, with potential applications in high-temperature electronics, thermoelectrics, and specialized optoelectronic devices where conventional semiconductors fail. The material's notable stiffness and thermal stability make it attractive for extreme-environment applications, though it remains largely in the research and development phase with limited commercial deployment compared to established semiconductor platforms.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21,649.3 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 10,393.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00600 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6080 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data