Yb₁In₃ is an intermetallic compound composed of ytterbium and indium, belonging to the rare-earth intermetallic semiconductor family. This material is primarily of research interest rather than established commercial production, with potential applications in thermoelectric devices and low-temperature electronics where the electronic properties of rare-earth-containing compounds can be exploited. Engineers considering this material should recognize it as an experimental composition whose viability depends on specific performance requirements in niche applications, as conventional semiconductors typically offer more mature processing, scalability, and cost advantages.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40.07 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 22.72 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00350 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3910 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data