Yb1I2 is an ytterbium iodide compound belonging to the rare-earth halide semiconductor family, primarily studied in research and development contexts rather than established commercial production. This material is of interest for optoelectronic and photonic applications due to the electronic and optical properties characteristic of ytterbium-based compounds, though it remains largely in the experimental phase with limited industrial deployment compared to more conventional semiconductor materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,315.8 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,360.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.703 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.714 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data