Yb1 Bi2 I1 O4
semiconductor· Yb1 Bi2 I1 O4
Yb₁Bi₂I₁O₄ is a mixed-valence iodide-oxide semiconductor compound combining rare-earth ytterbium, bismuth, iodine, and oxygen in a layered crystal structure. This is an experimental material primarily studied in academic research contexts for its potential in photovoltaic and optoelectronic applications, leveraging bismuth's lead-free perovskite alternatives and rare-earth doping strategies to engineer bandgap and electronic transport. The material represents emerging work in halide semiconductors where engineering the anion sublattice (iodide + oxide) offers tunable optical and electrical properties distinct from conventional single-halide perovskites or oxide semiconductors.
experimental photovoltaicslead-free perovskite alternativesoptical sensors and detectorsrare-earth doped semiconductorsmaterials research
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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