Yb1 Bi2 I1 O4 — Properties & Data | MatWorld

Yb1 Bi2 I1 O4

semiconductor

· Yb1 Bi2 I1 O4

Yb₁Bi₂I₁O₄ is a mixed-valence iodide-oxide semiconductor compound combining rare-earth ytterbium, bismuth, iodine, and oxygen in a layered crystal structure. This is an experimental material primarily studied in academic research contexts for its potential in photovoltaic and optoelectronic applications, leveraging bismuth's lead-free perovskite alternatives and rare-earth doping strategies to engineer bandgap and electronic transport. The material represents emerging work in halide semiconductors where engineering the anion sublattice (iodide + oxide) offers tunable optical and electrical properties distinct from conventional single-halide perovskites or oxide semiconductors.

experimental photovoltaicslead-free perovskite alternativesoptical sensors and detectorsrare-earth doped semiconductorsmaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.576	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.745	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Yb1 Bi2 I1 O4

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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