Yb₁As₄Rh₆ is an intermetallic semiconductor compound combining ytterbium, arsenic, and rhodium, representing a rare-earth transition metal arsenide with potential for thermoelectric and electronic device applications. This is primarily a research material studied for its unique electronic structure and potential functional properties in advanced materials research rather than established production use. The material belongs to a family of complex intermetallics that are of interest to condensed matter physicists and materials scientists exploring novel semiconducting behavior, mixed-valence effects, and potential device functionality in niche high-performance applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25,089.9 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 8,582.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01370 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6420 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data