Yttrium arsenide (YAs) is a binary compound semiconductor ceramic combining yttrium and arsenic, belonging to the III-V semiconductor material family. It is primarily investigated in research and specialized optoelectronic applications where direct bandgap semiconductors are needed for light emission and detection in the infrared spectrum. YAs offers potential advantages in high-frequency and high-power device development, though it remains less commercialized than mainstream semiconductors like GaAs; its utility depends on specific wavelength requirements and integration with existing device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 10,948.5 | ksi | — | ||
| ↳ | 11,526.1 | ksi | — | ||
Poisson's Ratio(ν) | 0.2200 | - | — | ||
Shear Modulus(G)2 entries | 7,394.1 | ksi | — | ||
| ↳ | 8,299.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1996 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -12.38 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.644 | eV/atom | — |