Y3GaS6 is a rare-earth gallium sulfide semiconductor compound combining yttrium, gallium, and sulfur elements. This material remains primarily in research and development stages, belonging to the family of chalcogenide semiconductors that show promise for infrared optics, photodetection, and solid-state lighting applications where wide bandgap semiconductors offer advantages over conventional materials. Its rare-earth composition and sulfide chemistry position it as a candidate for specialized optoelectronic devices, though industrial adoption and manufacturing maturity are currently limited compared to established semiconductor platforms.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.844 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.052 | eV | DFT · OptB88vdW | ||
| ↳ | 2.861 | eV | DFT · TBmBJ | ||
| ↳ | 2.880 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 7.222 | - | DFT · OptB88vdW | ||
| ↳ | 5.800 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 6.320 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.906 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data