Y3Ga1C1 is a ternary carbide semiconductor compound combining yttrium, gallium, and carbon—a rare composition that sits at the intersection of high-performance ceramic and semiconductor research. This material is primarily of research interest rather than established industrial production, explored for potential applications in wide-bandgap electronics and high-temperature semiconductor devices where conventional III-V semiconductors reach their limits. Its notable stiffness and mechanical stability make it a candidate for future power electronics and extreme-environment applications, though commercial viability and manufacturability remain under development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,815.8 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 9,404.2 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03840 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5600 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data