Y3 Ga1 C1

semiconductor
· Y3 Ga1 C1

Y3Ga1C1 is a ternary carbide semiconductor compound combining yttrium, gallium, and carbon—a rare composition that sits at the intersection of high-performance ceramic and semiconductor research. This material is primarily of research interest rather than established industrial production, explored for potential applications in wide-bandgap electronics and high-temperature semiconductor devices where conventional III-V semiconductors reach their limits. Its notable stiffness and mechanical stability make it a candidate for future power electronics and extreme-environment applications, though commercial viability and manufacturability remain under development.

wide-bandgap semiconductors (research)high-temperature power electronics (emerging)extreme-environment device materials (development stage)advanced ceramics researchnext-generation III-V semiconductor alternatives

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
Pa
Shear Modulus(G)
Pa
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.