Y2GaN3 is a rare-earth gallium nitride ceramic compound combining yttrium, gallium, and nitrogen. This material belongs to the family of advanced nitride ceramics, which are primarily of research and developmental interest for next-generation applications requiring exceptional hardness, thermal stability, and chemical resistance. The compound shows potential in high-temperature structural applications and semiconductor-related environments where conventional nitride ceramics reach performance limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1882 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.563 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 6.786 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1978 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.306 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data