Y2 Zn2 As2 O2
semiconductorY2Zn2As2O2 is an experimental ternary oxide semiconductor compound combining yttrium, zinc, and arsenic elements, belonging to the broader family of mixed-metal arsenide oxides under active research. This material is primarily investigated in academic and advanced materials laboratories for potential optoelectronic and photovoltaic applications, where the combination of rare-earth (yttrium) and main-group semiconductors may offer tunable bandgap and carrier transport properties. While not yet commercialized at scale, compounds in this material family are of interest for next-generation solar cells, photodetectors, and wide-bandgap semiconductor devices where conventional III-V or II-VI semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |