Y2 S1 O2
semiconductorY2S1O2 is an yttrium-based oxysulfide semiconductor compound combining yttrium oxide and sulfide phases, primarily explored in research contexts for optoelectronic and photocatalytic applications. This material family is investigated for potential use in visible-light photocatalysis, phosphor materials, and next-generation semiconductor devices where the mixed anion composition can provide tunable bandgaps and enhanced light absorption compared to single-phase oxides or sulfides alone. Its mechanical stiffness makes it potentially suitable for harsh-environment sensing or structural semiconductor applications, though commercial adoption remains limited pending optimization of synthesis routes and device integration methods.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |