Y2S1O2 is an yttrium-based oxysulfide semiconductor compound combining yttrium oxide and sulfide phases, primarily explored in research contexts for optoelectronic and photocatalytic applications. This material family is investigated for potential use in visible-light photocatalysis, phosphor materials, and next-generation semiconductor devices where the mixed anion composition can provide tunable bandgaps and enhanced light absorption compared to single-phase oxides or sulfides alone. Its mechanical stiffness makes it potentially suitable for harsh-environment sensing or structural semiconductor applications, though commercial adoption remains limited pending optimization of synthesis routes and device integration methods.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 123.4 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 68.70 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.116 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.464 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data