Y2Mn4S8 is a ternary sulfide semiconductor compound combining yttrium, manganese, and sulfur in a layered crystal structure. This material is primarily of research and developmental interest rather than established in high-volume production, positioned within the broader class of transition-metal chalcogenides being investigated for next-generation electronic and photonic devices. The compound's potential stems from its unique magnetic and electronic properties arising from the manganese d-orbitals and layered sulfide architecture, offering opportunities in niche applications where conventional semiconductors fall short.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2649 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.115 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data