Y2As6 is a rare-earth arsenide compound belonging to the family of intermetallic semiconductors, where yttrium combines with arsenic in a defined stoichiometric ratio. This material is primarily of research and exploratory interest rather than established industrial production, with potential applications in high-temperature electronics, thermoelectric devices, and optoelectronic systems that exploit the electronic properties of rare-earth arsenides. While not yet widely deployed commercially, Y2As6 represents the broader class of rare-earth pnictide semiconductors being investigated for advanced applications where conventional semiconductors reach thermal or performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00110 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5290 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data