Y1 is a semiconductor material whose specific composition is not publicly specified, likely a compound or doped phase within a binary or ternary system. Without confirmed identity, it appears to be under investigation for electronic or optoelectronic applications, potentially belonging to a III-V, II-VI, or oxide semiconductor family based on typical classification schemes. The material's mechanical stiffness suggests applicability in device structures requiring both electrical functionality and mechanical robustness, making it relevant for integrated circuits, power devices, or specialized sensor technologies where thermal or structural stability is critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,961.1 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,585.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02220 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.01900 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data