Y1 Tl1 Cd1
semiconductorY₁Tl₁Cd₁ is a ternary intermetallic semiconductor compound combining yttrium, thallium, and cadmium in a 1:1:1 stoichiometric ratio. This is a research-phase material within the broader class of ternary semiconductors; such compounds are being investigated for potential optoelectronic and thermoelectric applications where the combination of rare-earth (yttrium) and post-transition metal elements (thallium, cadmium) may enable tunable band structures and charge-carrier properties distinct from binary semiconductors. The material's practical deployment remains largely experimental, with interest driven by the possibility of engineering band gaps and transport properties for next-generation semiconductor devices in niche applications where conventional materials (silicon, GaAs, InP) prove insufficient.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |