Y1 Ti1 is a yttrium-titanium compound semiconductor with potential applications in advanced electronic and optoelectronic devices. This material represents an emerging research composition that combines yttrium's rare-earth properties with titanium's known semiconductor behavior, positioning it within the broader family of intermetallic semiconductors. The specific industrial maturity and performance advantages of this particular composition require validation against conventional titanium-based semiconductors and established rare-earth compounds for practical engineering adoption.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 56.10 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 9.300 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04970 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3530 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data