Y1 Ti1 O3 — Properties & Data | MatWorld

Y1 Ti1 O3

semiconductor

· Y1 Ti1 O3

Y₁Ti₁O₃ is a mixed-metal oxide semiconductor compound combining yttrium and titanium in a 1:1 stoichiometry. This material belongs to the family of perovskite-related oxides and is primarily investigated in research contexts for its electronic and ionic transport properties. The compound is of interest in emerging applications requiring high-temperature stability and controlled band-gap behavior, though it remains largely in the research phase rather than widespread commercial production.

experimental semiconductorshigh-temperature electronicssolid-state energy storagephotocatalytic researchthin-film device developmentceramic oxide electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	198.3	GPa	DFT · OptB88vdW
Shear Modulus(G)	72.74	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01060	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.227	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Y1 Ti1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control