Y1 Ti1 F5 is a titanium-based semiconductor compound incorporating yttrium and fluorine elements, likely developed for specialized electronic or optoelectronic applications. This material represents a research-phase composition combining refractory metal properties with semiconductor behavior, positioning it at the intersection of high-temperature stability and controlled electrical conductivity. The inclusion of fluorine suggests potential for wide bandgap semiconductor performance, making it relevant for high-power, high-frequency, or radiation-hardened device architectures where conventional semiconductors fall short.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,977.8 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 6,232.7 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01650 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.525 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data