Y1 Sn1 O3 — Properties & Data | MatWorld

Y1 Sn1 O3

semiconductor

· Y1 Sn1 O3

Y1Sn1O3 is an yttrium tin oxide ceramic compound belonging to the family of mixed-metal oxides. This material is primarily investigated in research contexts for applications requiring high-temperature stability and semiconducting behavior, particularly in contexts where tin oxide's electronic properties are enhanced or modified by yttrium doping.

experimental semiconductorshigh-temperature ceramicsgas sensingthin-film electronicsresearch materialsoxide semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00350	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.949	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Y1 Sn1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control