Y1 N1 — Properties & Data | MatWorld

Y1 N1

semiconductor

· Y1 N1

Y1N1 is a semiconductor compound in the yttrium nitride material family, representing an emerging class of wide-bandgap semiconductors with potential for high-temperature and high-power electronic applications. While not yet widely commercialized, yttrium nitride and related rare-earth nitride semiconductors are being investigated for next-generation devices that require superior thermal stability and electrical properties compared to conventional silicon-based semiconductors.

high-temperature electronicswide-bandgap semiconductor researchpower device developmentadvanced optoelectronicsnext-generation semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	157.7	GPa	DFT · OptB88vdW
Shear Modulus(G)	44.38	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03870	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.048	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Y1 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control