Y1 Bi2 I1 O4

semiconductor
· Y1 Bi2 I1 O4

Y₁Bi₂I₁O₄ is an experimental bismuth-based mixed-halide oxide semiconductor combining rare-earth (yttrium) and heavy-metal (bismuth) elements with iodine and oxygen. This compound belongs to the family of halide perovskites and perovskite-like semiconductors, which are actively researched for optoelectronic applications due to their tunable bandgaps and potential for solution-based manufacturing. The material is primarily of research interest rather than established industrial production, with potential applications in photovoltaic devices, photodetectors, and X-ray imaging where bismuth's high atomic number and iodide's strong light absorption are advantageous.

photovoltaic researchphotodetectorsX-ray scintillatorsoptoelectronic devicesradiation detectionlaboratory/experimental phase

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
ksi
Shear Modulus(G)
ksi
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.