Y₁Bi₂I₁O₄ is an experimental bismuth-based mixed-halide oxide semiconductor combining rare-earth (yttrium) and heavy-metal (bismuth) elements with iodine and oxygen. This compound belongs to the family of halide perovskites and perovskite-like semiconductors, which are actively researched for optoelectronic applications due to their tunable bandgaps and potential for solution-based manufacturing. The material is primarily of research interest rather than established industrial production, with potential applications in photovoltaic devices, photodetectors, and X-ray imaging where bismuth's high atomic number and iodide's strong light absorption are advantageous.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 78.14 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 43.59 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.527 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.104 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data