Y1 Bi1 O3
semiconductorY₁Bi₁O₃ is an experimental ternary oxide ceramic compound combining yttrium and bismuth oxides, belonging to the family of mixed rare-earth bismuthates under active research for functional ceramics applications. This material is primarily investigated in research settings for potential use in photocatalysis, optoelectronics, and solid-state chemistry due to the combined electronic properties of rare-earth (Y) and post-transition metal (Bi) elements. Its selection would be driven by researchers seeking novel band-gap engineering or photoinduced properties rather than by established industrial applications, making it most relevant for materials development and proof-of-concept projects rather than production-stage engineering.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |