WF6
metalWF6 (tungsten hexafluoride) is a volatile tungsten compound used primarily as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. It is essential in the semiconductor and microelectronics industries for depositing tungsten thin films on integrated circuits, where it enables precise metallization of interconnects and contacts at the nanoscale. WF6 is valued over alternative tungsten sources because of its high volatility, excellent film conformality, and compatibility with modern semiconductor manufacturing—making it the preferred choice for advanced device fabrication where traditional sputtering or other deposition methods cannot achieve the required coverage uniformity in high-aspect-ratio features.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1780 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8280 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -2.663 | eV/atom | — |