W2Se2S2 is a mixed-chalcogenide layered semiconductor compound combining tungsten with selenium and sulfur constituents, belonging to the family of transition metal dichalcogenides (TMDCs) and their mixed-anion variants. This material is primarily investigated in research contexts for its potential in optoelectronic and excitonic applications, where the intentional mixing of chalcogens (Se and S) enables bandgap tuning and modified electronic properties compared to single-chalcogenide analogues like WSe2 or WS2. The alloyed composition offers advantages for photovoltaic devices, light-emitting applications, and heterostructure engineering where precise control of electronic bandgap and carrier dynamics is required.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 33.70 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 24.70 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7035 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6670 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data