W2N4 is a nitride-based semiconductor compound in the tungsten-nitrogen chemical family, representing a material system under active research for advanced electronic and photonic applications. Tungsten nitride semiconductors are investigated for their potential in high-temperature electronics, power devices, and optoelectronic components where thermal stability and wide bandgap properties are advantageous over conventional semiconductors. This material family is particularly relevant for researchers exploring next-generation wide-bandgap semiconductor alternatives to gallium nitride (GaN) and silicon carbide (SiC) in demanding thermal and high-power environments.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 286.1 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 157.0 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04190 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4080 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data