W1Se2 is a layered transition metal dichalcogenide (TMD) semiconductor composed of tungsten and selenium. This material is primarily of research and developmental interest, studied for its potential in next-generation electronics, optoelectronics, and energy storage applications due to its direct bandgap properties and strong light-matter interactions characteristic of the TMD family. Engineers exploring W1Se2 would consider it for applications requiring atomically-thin semiconductors with tunable electronic properties, though it remains largely in the experimental phase compared to established commercial semiconductors like silicon or gallium arsenide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22.36 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 16.63 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.334 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4660 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data