W1O2 is a tungsten oxide semiconductor compound with a stoichiometric ratio of one tungsten to two oxygen atoms, representing a sub-oxide phase within the tungsten oxide family. This material is primarily of research interest for photoelectrochemical applications, gas sensing, and catalysis, where its electronic properties and surface reactivity offer advantages in energy conversion and environmental monitoring systems. The material's performance characteristics make it particularly relevant for developers working on next-generation electrochemical devices and photocatalytic systems seeking alternatives to conventional tungsten trioxide and other transition metal oxides.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,769.6 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,021.8 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000600 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.682 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data