W1 N2 is a tungsten nitride semiconductor compound combining tungsten with nitrogen, typically investigated as a hard, refractory material in research and specialized industrial contexts. It is explored for high-temperature and wear-resistant applications where its hardness and thermal stability offer advantages over conventional metallic coatings and softer semiconductors. The material family is of particular interest for barrier layers, diffusion barriers in microelectronics, and protective coatings in extreme environments, though commercial adoption remains limited compared to established alternatives like TiN or established silicon-based semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 54,477.8 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 33,687.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.758 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5890 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data