VGaN3 is a vanadium gallium nitride compound, likely a research-phase material exploring ternary nitride compositions for advanced semiconductor and refractory applications. This material family is of interest in high-temperature electronics, wide-bandgap semiconductor research, and potentially hard coating or structural applications where the combination of vanadium and gallium nitride phases could offer enhanced thermal stability or mechanical properties compared to binary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.2611 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.900 | eV/atom | — |