VFeSb is a half-Heusler compound semiconductor composed of vanadium, iron, and antimony, belonging to a family of intermetallic semiconductors with potential thermoelectric and spintronic properties. This material is primarily of research and development interest rather than established production use, investigated for high-temperature thermoelectric power generation and as a candidate for topological electronic applications where its electronic band structure offers advantages over conventional semiconductors. Engineers would consider VFeSb in specialized applications requiring materials that combine metallic mechanical properties with semiconductor electronic behavior, particularly in energy conversion systems or advanced electronics where conventional silicon or III-V semiconductors are unsuitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 23,263 | ksi | DFT | ||
| ↳ | 23,235 | ksi | DFT · OptB88vdW | ||
| ↳ | 23,263 | ksi | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.4905 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | DFT · PBE | ||
Poisson's Ratio(ν)2 entries | 0.3500 | - | DFT · OptB88vdW | ||
| ↳ | 0.3288 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 8,991 | ksi | DFT | ||
| ↳ | 8,554.3 | ksi | DFT · OptB88vdW | ||
| ↳ | 8,991 | ksi | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2865 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4600 | eV | Measured | ||
| ↳ | 0.5140 | eV | DFT · OptB88vdW | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 61.46 | - | DFT · OptB88vdW | ||
| ↳ | 44.43 range 31.02–57.84median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 33.83 | - | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 0.08000 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.08000 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 5.651 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.7835 | C/m² | DFT · OptB88vdW | ||
| ↳ | 2.126 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.00216 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00327 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -262.4 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 370.7 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 8.770 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.5491 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.3325 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data