VCu3S4 — Properties & Data | MatWorld

VCu3S4

Name: VCu3S4
Brand: MatWorld

semiconductor

· VCu3S4

VCu₃S₄ is a ternary semiconductor compound combining vanadium and copper sulfides, belonging to the class of mixed-metal chalcogenides. This material is primarily of research interest for photovoltaic and thermoelectric applications, where its semiconducting properties and tunable band structure offer potential advantages over binary sulfide systems. The copper-vanadium chemistry makes it a candidate for next-generation energy conversion devices, though industrial deployment remains limited compared to mature semiconductor alternatives.

photovoltaic absorbersthermoelectric devicesthin-film solar cellsmaterials researchsemiconductor optoelectronicscopper-based ternary compounds

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	39.06	GPa	DFT
↳	44.83	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2600	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	25.35	GPa	DFT
↳	26.60	GPa	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Density(ρ)	3.917	kg/m³	DFT · OptB88vdW

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Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.000	eV	Measured
↳	1.180	eV	DFT · OptB88vdW
↳	1.197	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	7.739	-	DFT · OptB88vdW
↳	7.650	-	DFT · PBE
↳	7.830 range 7.649–8.010median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	9.250	-	DFT · OptB88vdW
↳	8.456	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	2.050	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.5700	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.1159	C/m²	DFT · OptB88vdW
↳	0.06231	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.00108	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00224	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-373.2	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	264.4	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	33.69	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.6445	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

VCu3S4

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