V6 N3 is a vanadium-nitrogen compound semiconductor, likely a vanadium nitride-based material belonging to the transition metal nitride family. This material is of interest in research contexts for its potential as a wide-bandgap semiconductor or hard coating material, offering potential advantages in high-temperature, high-radiation, or corrosive environments where conventional semiconductors degrade. Engineers would consider vanadium nitride compounds for specialized applications requiring thermal stability, hardness, or electronic properties distinct from silicon and III-V semiconductors, though availability and maturity are typically limited compared to mainstream semiconductor platforms.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00340 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.055 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data